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| 2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg VISO *6 Ratings 600 600 17 68 30 17 412 20 5 3.125 120 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C kVrms *1 L=2.62mH, Vcc=60V *2 Tch <150C *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS< 600V *5 VGS=-30V *6 t=60sec f=60Hz = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=30V VDS=0V ID=8.5A VGS=10V ID=8.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8.5A VGS=10V RGS=10 VCC=300V ID=17A VGS=10V L=2.62mH Tch=25C IF=17A VGS=0V Tch=25C IF=17A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.37 Units V V A nA S pF 10 10 0.29 20 2280 3420 290 435 16 24 26 39 37 56 78 117 13 19 54 81 15 23 20 30 0.93 0.7 10.0 ns nC 17 1.50 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.042 40.0 Units C/W C/W 1 2SK3528-01R Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 45 40 35 20V 10V 8V 7.0V 140 120 100 30 6.5V ID [A] 80 PD [W] 25 20 15 60 40 10 20 5 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 6.0V VGS=5.5V 0 18 20 Tc [C] VDS [V] Typical Transfer Characteristic 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] gfs [S] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance 0.8 0.7 0.6 RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 5.5V 6.0V 6.5V 1.0 0.9 0.8 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=8.5A,VGS=10V RDS(on) [ ] 0.7 0.5 0.4 0.3 0.2 0.2 0.1 0.0 0 5 10 15 20 25 30 35 40 45 0.1 0.0 -50 -25 0 25 50 75 100 125 150 7.0V 8V 10V 20V RDS(on) [ ] 0.6 0.5 0.4 0.3 typ. max. ID [A] Tch [C] 2 2SK3528-01R FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 7.0 6.5 6.0 5.5 24 22 20 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=17A, Tch=25C Vcc= 300V VGS(th) [V] 5.0 4.5 18 Vcc= 120V 16 14 Vcc= 480V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80s Pulse test,Tch=25C Ciss 10 0 10 C [nF] 10 -1 Coss IF [A] 1 0.1 0.00 10 -2 Crss 10 -3 10 -1 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=300V, VGS=10V, RG=10 500 450 400 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=60V,I(AV)<=17A 10 2 td(off) 350 300 t [ns] td(on) EAV [mJ] tf 0 1 2 250 200 150 100 50 10 1 tr 10 0 0 -1 10 10 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3528-01R FUJI POWER MOSFET 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T,D=0 10 0 Zth(ch-c) [ C/W] o 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Maximum Avalanche Current Pulsewidth 10 IAV=f(tAV):starting Tch=25C. Vcc=60V 2 Avalanche current IAV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 4 |
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